MW6S010NR1 MW6S010GNR1
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistor
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for Class A or Class AB base station applications with frequencies
up to 1500 MHz. Suitable for analog and digital modulation and multicarrier
amplifier applications.
Typical Two-Tone Performance at 960 MHz: V
DD
= 28 Volts, I
DQ
=
125 mA, P
out
= 10 Watts PEP
Power Gain -- 18 dB
Drain Efficiency -- 32%
IMD -- -37 dBc
Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 10 Watts CW
Output Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
On-Chip RF Feedback for Broadband Stability
Qualified Up to a Maximum of 32 V
DD
Operation
Integrated ESD Protection
200C Capable Plastic Package
N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
-0.5, +68
Vdc
Gate-Source Voltage
V
GS
-0.5, +12
Vdc
Total Device Dissipation @ T
C
= 25C
Derate above 25C
P
D
61.4
0.35
W
W/C
Storage Temperature Range
T
stg
- 65 to +175
C
Operating Junction Temperature
T
J
200
C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
(1.2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80C, 10 W PEP
R
JC
2.85
C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MW6S010N
Rev. 3, 5/2006
Freescale Semiconductor
Technical Data
MW6S010NR1
MW6S010GNR1
450-1500 MHz, 10 W, 28 V
LATERAL N-CHANNEL
BROADBAND RF POWER MOSFETs
CASE 1265-08, STYLE 1
TO-270-2
PLASTIC
MW6S010NR1
CASE 1265A-02, STYLE 1
TO-270-2 GULL
PLASTIC
MW6S010GNR1
Freescale Semiconductor, Inc., 2006. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MW6S010NR1 MW6S010GNR1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1A
Machine Model (per EIA/JESD22-A115)
A
Charge Device Model (per JESD22-C101)
III
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
1
260
C
Table 5. Electrical Characteristics
(T
C
= 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68
Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
10
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
I
DSS
--
--
1
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
--
--
1
Adc
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 100 Adc)
V
GS(th)
1.5
2.3
3
Vdc
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 125 mAdc)
V
GS(Q)
--
3.1
--
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 0.3 Adc)
V
DS(on)
--
0.27
0.35
Vdc
Dynamic Characteristics
Input Capacitance
(V
DS
= 28 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
iss
--
23
--
pF
Output Capacitance
(V
DS
= 28 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
--
10
--
pF
Reverse Transfer Capacitance
(V
DS
= 28 Vdc 30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
--
0.32
--
pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 125 mA, P
out
= 10 W PEP, f = 960 MHz,
Two-Tone Test, 100 kHz Tone Spacing
Power Gain
G
ps
17.5
18
20.5
dB
Drain Efficiency
D
31
32
--
%
Intermodulation Distortion
IMD
--
-37
-33
dBc
Input Return Loss
IRL
--
-18
-10
dB
Typical
Performances (In Freescale 450 MHz Demo Board, 50 hm system) V
DD
= 28 Vdc, I
DQ
= 150 mA, P
out
= 10 W PEP,
420-470 MHz, Two-Tone Test, 100 kHz Tone Spacing
Power Gain
G
ps
--
20
--
dB
Drain Efficiency
D
--
33
--
%
Intermodulation Distortion
IMD
--
-40
--
dBc
Input Return Loss
IRL
--
-10
--
dB
MW6S010NR1 MW6S010GNR1
3
RF Device Data
Freescale Semiconductor
Figure 1. MW6S010NR1(GNR1) Test Circuit Schematic -- 900 MHz
C9
C2
+
RF
OUTPUT
C5
V
BIAS
C3
+
V
SUPPLY
RF
INPUT
Z1
C1
Z2
Z3
Z4
C8
R1
DUT
C4
B1
C6
C7
C10
Z5
L1
C14
Z6
C17
C20
Z7
C11
C12
C13
C15
C16
+
C18
+
C19
+
Z5
0.313 x 0.902 Microstrip
Z6
0.073 x 1.080 Microstrip
Z7
0.073 x 0.314 Microstrip
PCB
Rogers ULTRALAM 2000, 0.031,
r
= 2.55
Z1
0.073 x 0.223 Microstrip
Z2
0.112 x 0.070 Microstrip
Z3
0.213 x 0.500 Microstrip
Z4
0.313 x 1.503 Microstrip
Table 6. MW6S010NR1(GNR1) Test Circuit Component Designations and Values -- 900 MHz
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
2743019447
Fair-Rite
C1, C6, C11, C20
47 pF Chip Capacitors
100B470JP500X
ATC
C2, C18, C19
22 F, 35 V Tantalum Capacitors
T491D226K035AS
Kemet
C3, C16
220 F, 63 V Electrolytic Capacitors, Radial
13668221
Phillips
C4, C15
0.1 F Chip Capacitors
CDR33BX104AKWS
Kemet
C5, C8, C17
0.8-8.0 pF Variable Capacitors, Gigatrim
272915L
Johanson
C7, C12
24 pF Chip Capacitors
100B240JP500X
ATC
C9, C10, C13
6.8 pF Chip Capacitors
100B6R8JP500X
ATC
C14
7.5 pF Chip Capacitor
100B7R5JP500X
ATC
L1
12.5 nH Inductor
A04T-5
Coilcraft
R1
1 k Chip Resistor
CRCW12061001F100
Vishay-Dale
4
RF Device Data
Freescale Semiconductor
MW6S010NR1 MW6S010GNR1
Figure 2. MW6S010NR1(GNR1) Test Circuit Component Layout -- 900 MHz
C3
MW6S010N
C4
C7
C10
C6
B1
C2
C1
C5
C8
C9
R1
L1
C16
C18
C19
C15
C12
C11
C13
C14
C17
C20
MW6S010NR1 MW6S010GNR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
-- 900 MHz
970
16
48
910
- 26
- 8
IRL
G
ps
IMD
f, FREQUENCY (MHz)
V
DD
= 28 Vdc, P
out
= 10 W (Avg.)
I
DQ
= 125 mA, 100 kHz Tone Spacing
44
- 10
40
- 12
36
- 14
32
- 16
28
- 18
24
- 20
20
- 22
930
950
960
Figure 3. Two-Tone Wideband Performance
@ P
out
= 10 Watts
P
out
, OUTPUT POWER (WATTS) AVG.
15
20
1
I
DQ
= 190 mA
V
DD
= 28 Vdc, f = 945 MHz
Two- Tone Measurements
100 kHz Tone Spacing
19
17
16
10
100
Figure 4. Two-Tone Power Gain versus
Output Power
100
- 70
- 10
0.1
7th Order
V
DD
= 28 Vdc, I
DQ
= 125 mA
f = 945 MHz, Two- Tone Measurements
100 kHz Tone Spacing
5th Order
3rd Order
1
10
- 20
- 30
- 40
- 50
- 60
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 5. Intermodulation Distortion Products
versus Output Power
IMD,
INTERMODULA
TION DIST
O
R
T
ION (dBc)
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULA
TION DIST
OR
TION (dBc)
10
- 55
- 15
0.1
7th Order
TWO- TONE SPACING (MHz)
V
DD
= 28 Vdc, P
out
= 10 W (Avg.)
I
DQ
= 125 mA, Two- Tone Measurements
(f1+f2)/2 = Center Frequency = 945 MHz
5th Order
3rd Order
- 20
- 25
- 30
- 35
- 40
1
100
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
29
48
P3dB = 43.14 dBm (20.61 W)
P
in
, INPUT POWER (dBm)
V
DD
= 28 Vdc, I
DQ
= 125 mA
Pulsed CW, 8
sec(on), 1 msec(off)
f = 945 MHz
46
44
42
40
38
21
23
25
Actual
Ideal
27
19
Figure 7. Pulse CW Output Power versus
Input Power
IMD,
INTERMODULA
TION DIST
OR
TION (dBc)
P
out
, OUTPUT POWER (dBm)
920
940
18
90 mA
125 mA
P1dB = 42.23 dBm (16.71 W)
- 50
- 45
- 24
0.1
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
D
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